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| Advance Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute IISOL 1mA Mounting force t = 1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C IXFL36N110P VDSS ID25 RDS(on) trr = = 1100V 26A 260m 300ns ISOPLUS i5-PakTM (HV) Maximum Ratings 1100 1100 30 40 26 110 18 2 20 520 -55 ... +150 150 -55 ... +150 300 260 2500 3000 40..120/4.5..27 8 V V V V A A A J V/ns W C C C C C V~ V~ N/lb. g Features UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Advantages Easy to mount Space savings High power density Applications: 1100 3.5 6.5 300 50 TJ = 125C V V nA A High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters G G = Gate S = Source S D D = Drain Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 18A, Note 1 Characteristic Values Min. Typ. Max. 4 mA 260 m (c) 2008 IXYS CORPORATION, All rights reserved DS99907A (04/08) IXFL36N110P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.15 VGS = 10V, VDS = 0.5 * VDSS, ID = 18A Gate input resistance VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 18A, Note 1 Characteristic Values Min. Typ. Max. 20 32 23 1240 110 0.85 60 54 94 45 350 117 157 S nF pF pF ns ns ns ns nC nC nC 0.24 C/W C/W Note: Bottom Tab meets 2500 Vrms isolation to the other pins. Tab ISOPLUS i5-PakTM HV (IXFL) Outline Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 18A RG = 1 (External) Source-Drain Diode TJ = 25C unless otherwise specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 20A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 36 144 1.5 A A V 300 ns 2.3 16 C A Note 1: Pulse test, t 300s; duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 |
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